ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 1 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? applications ? final stage amplifiers for repeaters ? mobile infrastructure soic8 package product features functional block diagram ? 1800 C 2300 mhz ? 14 db gain @ 1960 mhz ? 28.5 dbm p1db ? +44 dbm output ip3 ? +5v single positive supply ? leadfree/green/rohscompliant soic8 smt pkg general description pin configuration the ah115 is a high dynamic range driver amplifier in a low cost surface mount package. the ingap/gaas hbt is able to achieve high performance for various narrow band tuned application circuits with up to +44 dbm oip3 and +28.5 dbm of compressed 1 db power. all devices are 100% rf and dc tested. the ah115 is available in l ead free/green/rohscompliant soic8 package. the product is targeted for use as driver amplifier s for wireless infrastructure where high linearity and me dium power is required. the internal active bias allows the ah115 to maintain high linearity over temperature a nd operate directly off a +5 v supply. this combinati on makes the device an excellent fit for transceiver l ine cards and power amplifiers in current and next generation multi carrier 3g base stations. . ordering information part no. description ah115s8g ? watt, high ip3 ingap hbt amp ah115s8pcb1960 1960 mhz evaluation board ah115s8pcb2140 2140 mhz evaluation board standard t/r size = 500 pieces on a 7 reel . pin # symbol 1 vref 3 input 6, 7 output 8 vbias backside paddle gnd 2, 4, 5 n/c or gnd
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 2 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? specifications absolute maximum ratings parameter rating storage temperature 65 to +150 o c rf input power, cw, 50,t = 25oc +22 dbm device voltage +8 v device power 2 w device current 400 ma operation of this device outside the parameter rang es given above may cause permanent damage. recommended operating conditions parameter min typ max units v cc +5 v i cc 200 250 300 ma t j (for >10 6 hours mttf) +200 o c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommen ded operating conditions. electrical specifications test conditions unless otherwise noted: t lead =25oc, vcc=+5v, in tuned application circuit. parameter conditions min typical max units operational frequency range 1800 2300 mhz test frequency 2140 mhz gain 12.5 14.4 db input return loss 23 db output return loss 8 db output p1db +26.5 +28.5 dbm output ip3 see note 1. +41 +42 dbm wcdma channel power @ 45 dbc aclr see note 2. +20 dbm noise figure 5.3 db device voltage, vcc +5 v quiescent current, icq 200 250 300 ma thermal resistance, r th 62 o c/w notes: 1. 3oip measured with two tones at an output power of +11 dbm/tone separated by 1 mhz. the suppressi on on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 2. 3gpp wcdma, tm1+64dpch, 5 mhz offset, no clipp ing, par = 10.2 db @ 0.01% probability.
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 3 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? device characterization data v cc = +5 v, i cq = 250 ma, t lead = 25 c, unmatched 50 ohm system 0 7 14 21 28 35 0 0.5 1 1.5 2 2.5 gain (db) frequency (ghz) gain and maximum stable gain gain (max) gain (s21) - 1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 -1 -0.75-0.5-0.25 0 0.25 0.5 0.75 1 input smith chart 0.05 ghz 3 ghz output smith chart 0.05 ghz 3 ghz notes: the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain i s shown in the dashed red line. the impedance plots are shown from 0.5 C 3 ghz, with ma rkers placed at 0.5 ghz and 3 ghz. s-parameter data v cc = +5 v, i cq = 250 ma, t lead = 25 c, unmatched 50 ohm system, calibrated to de vice leads freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (angle) s22 (db) s22 (ang) 50 2.11 172.90 25.10 133.84 36.03 31.44 2.06 1 05.55 100 1.59 178.94 21.15 126.67 35.22 15.04 2.73 138.75 200 1.51 173.71 17.75 124.19 34.29 7.30 2.80 16 0.44 400 1.45 163.84 15.23 111.50 34.45 2.16 2.73 1 74.00 600 1.58 153.68 13.69 98.94 33.58 2.99 1.96 17 9.13 800 1.78 144.31 12.77 84.57 32.84 12.80 1.68 17 2.00 1000 1.96 134.21 11.94 69.70 32.77 18.76 1.85 1 66.98 1200 2.46 123.44 11.36 55.57 31.79 30.73 2.14 1 64.05 1400 3.30 111.21 11.17 40.93 31.12 45.14 2.30 1 63.07 1600 4.70 92.57 11.39 22.80 30.30 61.92 2.52 16 4.84 1800 8.15 78.58 11.64 1.64 29.47 83.99 2.43 164 .25 2000 19.01 93.29 11.51 25.24 29.31 112.79 1.84 162.38 2200 9.59 177.56 10.35 55.97 30.51 150.45 1.22 155.68 2400 4.09 159.30 7.87 83.78 32.59 177.62 1.06 1 47.58 2600 1.99 141.65 4.95 105.90 33.96 137.14 1.07 139.74 2800 1.12 127.57 1.97 122.86 34.68 109.27 1.19 132.15 3000 0.72 116.11 0.88 136.93 35.64 81.83 1.44 125.05
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 4 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? 1960 mhz application circuit (ah115-s8pcb1960) notes: bill of material ref des value description manufacturer part number u1 high linearity amplifier triquint ah115s8g c1, c2 22 pf cap, chip, 0603, 50v, 5%, npo/cog vari ous c3 100 pf cap, chip, 0603, 50 v, 5%, npo/cog variou s c4 10 uf cap, chip, 6032, 25 v, 20%, tant various c5, c7 1000 pf cap, chip, 0603, 50 v, 5%, x7r vario us c6 10 pf cap, chip, 0603, 50v, 5%, npo/cog various c8 0.8 pf cap, chip, 0603, 50 v, 0.05 pf various c9 2.0 pf cap, chip, 0603, 50 v, 0.05 pf various l1 18 nh coil, wire wound, 1008, 5% various r1 100 cap, chip, 0603, 50 v, 1%, 1/16w various r2 22 res, chip, 0603, 5%, 1/16w various r3 51 res, chip, 0603, 5%, 1/16w various r4 0 res, chip, 0603, 5%, 1/16w various d1 zener diode, 5.6v various 1. 0 jumpers may be replaced with copper traces in t he target application layout. 2. c8 is placed at 1.8 deg @ 1.96 ghz from c8 centerli ne to end of u1 pin 3. 3. c9 is placed at 20 deg @ 1.96 ghz from c9 centerlin e to end of u1 pin 6 and 7.
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 5 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? typical performance 1930 - 1990 mhz (ah115-s8pcb196 0) test conditions unless otherwise noted: v cc = +5 v, i cq = 250 ma, t lead = 25 c 6 8 10 12 14 16 1930 1940 1950 1960 1970 1980 1990 s21 (db) frequency (mhz) s21 vs. frequency -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 s11 (db) frequency (mhz) s11 vs. freqency -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 s22 (db) frequency (mhz) s22 vs. frequency 24 25 26 27 28 29 1930 1940 1950 1960 1970 1980 1990 p1 db (dbm) frequency (mhz) p1 db vs. frequency 1.5 2.5 3.5 4.5 5.5 6.5 1930 1940 1950 1960 1970 1980 1990 nf (db) frequency (mhz) noise figure vs. frequency -70 -63 -55 -48 -40 -33 15 16.5 18 19.5 21 22.5 24 acpr (dbc) output channel power (dbm) acpr vs. channel power is-95, 9 ch,fwd, 885 khz offset, 30 khz meas bw, 1960 mhz 36 38 40 42 44 46 1930 1940 1950 1960 1970 1980 1990 oip3 (dbm) frequency (mhz) oip3 vs. frequency +25 c, +11 dbm / tone 36 38 40 42 44 46 8 10 12 14 16 18 20 oip3 (dbm) output power (dbm) oip3 vs. output power freq=1960, 1961 mhz,+ 25 c 36 38 40 42 44 46 -40 -15 10 35 60 85 oip3 (dbm) temperature (c) oip3 vs. temperature freq=1960,1961 mhz, +11 dbm / tone frequency mhz 1930 1960 1990 gain db 14.3 14.3 14.3 input return loss db 11 12 13 output return loss db 8 8 8 oip3 @ pout = 11 dbm/tone, 1 mhz spacing dbm +43.7 +44 +44 channel power @45 dbc acpr, is95 9 channels fwd dbm +22.5 +22.5 +22.5 noise figure db 5 5 5 output p1db dbm +28.1 +28.3 +28.3 device / supply voltage v +5 quiescent current ma 250 +85 c +25 c 40 c +85 c +25 c 40 c +85 c +25 c 40 c +85 c +25 c 40 c +85 c +25 c 40 c +85 c +25 c 40 c
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 6 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? 2140 mhz application circuit (ah115-s8pcb2140) notes: bill of material ref des value description manufacturer part number u1 high linearity amplifier triquint ah115s8g c1, c2 22 pf cap, chip, 0603, 50v, 5%, npo/cog vari ous c3 100 pf cap, chip, 0603, 50 v, 5%, npo/cog variou s c4 10 uf cap, chip, 6032, 25 v, 20%, tant various c5, c7 1000 pf cap, chip, 0603, 50 v, 5%, x7r vario us c6 10 pf cap, chip, 0603, 50v, 5%, npo/cog various c9 1.8 pf cap, chip, 0603, 50v, 0.05 pf various l1 18 nh coil, wire wound, 1008, 5% various r1 100 cap, chip, 0603, 50 v, 1%, 1/16w various r2 22 res, chip, 0603, 5%, 1/16w various r3 51 res, chip, 0603, 5%, 1/16w various r4 0 res, chip, 0603, 5%, 1/16w various d1 zener diode, 5.6v various 1. 0 jumpers may be replaced with copper traces in t he target application layout. 2. c9 is placed at 13 deg @ 2.14 ghz from c9 centerlin e to end of u1 pin 6 and 7.
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 7 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? typical performance 2110 - 2170 mhz (ah115-s8pcb214 0) test conditions unless otherwise noted: v cc = +5 v, i cq = 250 ma, t lead = 25 c 6 8 10 12 14 16 2110 2120 2130 2140 2150 2160 2170 s21 (db) frequency (mhz) s21 vs. frequency -25 -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 s11 (db) frequency (mhz) s11 vs. frequency -25 -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 s22 (db) frequency (mhz) s22 vs. frequency -65 -60 -55 -50 -45 -40 -35 15 16 17 18 19 20 21 acpr (dbc) output channel power (dbm) acpr vs. channel power 3gpp w-cdma test model 1+64 dpch, 5 mhz offset, 2140 mhz 38 39 40 41 42 43 2110 2120 2130 2140 2150 2160 2170 oip3 (dbm) frequency (mhz) oip3 vs. frequency +25 c, +11 dbm / tone 35 37 39 41 43 45 -40 -15 10 35 60 85 oip3 (dbm) temperature ( c) oip3 vs. temperature frequency = 2140, 2141, +11 dbm / tone 35 37 39 41 43 45 8 10 12 14 16 18 20 oip3 (dbm) output power / tone (dbm) oip3 vs. output power frequency = 2450 mhz, temp = 25 c, vd=9v frequency mhz 2110 2140 2170 gain db 14.4 14.4 14.3 input return loss db 20 23 24 output return loss db 9 8 7 oip3 @ pout = 11 dbm/tone, 1 mhz spacing dbm +41.8 +41.5 +42.3 channel power @45 dbc acpr, wcdma, 3gpp, 5 mhz offset dbm +20 +20 +20 noise figure db 5.3 output p1db dbm +28.5 device / supply voltage v +5 quiescent current ma 250 +85 c +25 c 40 c +85 c +25 c 40 c +85 c +25 c 40 c +85 c +25 c 40 c
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 8 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? pin description pin symbol description 1 vref set reference current 2, 4, 5 n/c or gnd no electrical connection. provide an isolated or g rounded solder pad for mounting integrity. 3 rf input rf input. requires matching circuit to 50 . see application circuits. 6, 7 rf output rf output. requires matching circuit to 50 . see application circuits. 8 vbias set operating current. backside paddle gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see page 9 for suggested footpr int. applications information pc board layout circuit board material: .014 getek, 4 layer, 1 o z copper, microstrip line details: width = .026, spacing = . 026 the silk screen markers a, b, c, etc. and 1 , 2, 3, etc. are used as placemarkers for the input and out put tuning shunt capacitors C c8 and c9. the markers a nd vias are spaced in .050 increments. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process developmen t is recommended. for further technical information, refer to http://www.triquint.com/prodserv/more_info/default. aspx?prod_id=ah115
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 9 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? mechanical information package information and dimensions this package is leadfree/green/rohs compliant. it is compatible with both leadfree (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is nipdau. the component will be marked with an ah115g designator with an alphanumeric lot code on the top surface of the package. mounting configuration all dimensions are in millimeters (inches). angles are in degrees. notes: 1. ground / thermal vias are critical for the proper p erformance of this device. vias should use a .35mm (#80 / .0135) diameter drill and have a final plated thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and outer l ayers near the part to ensure optimal thermal perfo rmance. 3. mounting screws can be added near the part to faste n the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc bo ard in the region where the board contacts the heat sink. 5. rf trace width depends upon the pc board materia l and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. yxxx-z
ah115 1/2 watt, high linearity ingap hbt amplifier data sheet: rev a 11/23/10 - 10 of 10 - disclaimer: subject to change witho ut notice ? 2010 triquint semiconductor, inc. connecting the digital wor ld to the global network ? product compliance information esd information esd rating: class 1b value: passes between 500v and 1000v test: human body model (hbm) standard: jedec standard jesd22a114 msl rating level 2 at +260 c convection reflow jedec standard jstd020. solderability compatible with the latest version of jstd020, le ad free solder, 260 this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbpa (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@tqs.com fax: +1.503.615.8902 for technical questions and application information : email: sjcapplications.engineering@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding t he information contained herein. triquint assumes no responsibility or liab ility whatsoever for any of the information contain ed herein. triquint assumes no responsibility or liability whatsoever f or the use of the information contained herein. th e information contained herein is provided "as is, where is" and with all f aults, and the entire risk associated with such inf ormation is entirely with the user. all information contained herein is subj ect to change without notice. customers should obt ain and verify the latest relevant information before placing orders for triq uint products. the information contained herein or any use of such information does not grant, explicitly or implicitl y, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information its elf or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, lifesavi ng, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe perso nal injury or death.
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